AON6508

Single FETs, MOSFETs
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AON6508 Description

### AON6508 Description The AON6508 is a high-performance MOSFET (Metal Oxide) device from Alpha & Omega Semiconductor Inc., designed for applications requiring robust power management and efficient switching. With its N-CH 30V, 29A/32A rating, it offers superior performance in a compact 8DFN package. This obsolete device is still sought after for its unique features and advantages in specific use cases. ### AON6508 Features - **High Input Capacitance (Ciss)**: The AON6508 boasts a maximum input capacitance of 2010 pF @ 15 V, ensuring fast switching and reduced power consumption. - **Low Gate Charge (Qg)**: With a maximum gate charge of 49 nC @ 10 V, the AON6508 minimizes switching losses, improving overall efficiency. - **Robust Drain to Source Voltage (Vdss)**: The device can handle a maximum drain to source voltage of 30 V, making it suitable for high-voltage applications. - **High Power Dissipation**: The AON6508 can dissipate up to 4.2W at ambient temperature and 41W at case temperature, ensuring reliable operation in demanding environments. - **Low Rds On**: The maximum Rds On of 3.2mOhm @ 20A, 10V contributes to minimal conduction losses, enhancing the device's performance. - **Wide Vgs Range**: The AON6508 operates with a maximum Vgs of ±20V, providing flexibility in various applications. - **Compliance**: The device is REACH unaffected, ROHS3 compliant, and has a moisture sensitivity level of 1 (unlimited), ensuring environmental and regulatory compliance. ### AON6508 Applications The AON6508 is ideal for applications requiring high power and efficient switching, such as: - **Power Supplies**: The device's high voltage and current ratings make it suitable for power supply designs. - **Motor Controls**: The AON6508's low Rds On and high current capability make it an excellent choice for motor control applications. - **Industrial Automation**: Its robustness and high power dissipation make it ideal for industrial automation systems. ### Conclusion of AON6508 While the AON6508 is now considered obsolete, its unique combination of high input capacitance, low gate charge, and robust power dissipation still makes it a valuable option for specific applications. Its compliance with environmental and regulatory standards further enhances its appeal in industries where such compliance is crucial. Despite its age, the AON6508 remains a reliable choice for high-performance power management and switching in demanding applications.

Technical specifications

FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds2010 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs49 nC @ 10 V
Product StatusObsolete
Supplier Device Package8-DFN (5x6)
Drain to Source Voltage (Vdss)30 V
Power Dissipation (Max)4.2W (Ta), 41W (Tc)
Package / Case8-PowerSMD, Flat Leads
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
MfrAlpha & Omega Semiconductor Inc.
Vgs (Max)±20V
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 150°C (TJ)
FET Feature-
ECCNEAR99
Mounting TypeSurface Mount
Rds On (Max) @ Id, Vgs3.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Series-
Current - Continuous Drain (Id) @ 25°C29A (Ta), 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
HTSUS8541.29.0095
PackageTape & Reel (TR)
Base Product NumberAON650

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