| Number of Channels per Chip | 1 | |
| Unit Weight | 0.007055 oz | |
| Fabrication Technology | NPN Transistor | |
| Light Current | 3.2 mA | |
| Product | Phototransistors | |
| PPAP | No | |
| Fall Time | - | |
| Product Status | Active | |
| Voltage - Collector Emitter Breakdown (Max) | 35 V | |
| RoHS | RoHS Compliant | |
| Automotive | No | |
| Propagation Delay - Max | - | |
| Supplier Package | T-1 | |
| Package / Case | Radial, T-1 Lens | |
| REACH Status | REACH Unaffected | |
| Lens Shape Type | Domed | |
| EU RoHS | Compliant | |
| Peak Wavelength | 880 nm | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Operating Temperature | -40°C ~ 100°C (TA) | |
| Collector-Emitter Breakdown Voltage | 35 V | |
| Current - Collector (Ic) (Max) | 50 mA | |
| Maximum Collector Current (mA) | 50 | |
| Output Current | - | |
| ECCN | EAR99 | |
| Orientation | Top View | |
| Mounting Type | Through Hole | |
| Wavelength | 880nm | |
| Pin Count | 2 | |
| Mounting | Through Hole | |
| Lens Color/Style | Clear | |
| Rise Time | - | |
| Viewing Orientation | Top View | |
| Lead Shape | Through Hole | |
| Peak Wavelength (nm) | 880 | |
| Collector- Emitter Voltage VCEO Max | 35 V | |
| HTSUS | 8541.49.7080 | |
| Package | Bulk | |
| USHTS | 8541497080 | |
| Maximum On-State Collector Current | 50 mA | |
| PCB changed | 2 | |
| HTS | 8541.49.70.80 | |
| Viewing Angle | 50° | |
| Maximum Collector-Emitter Voltage (V) | 35 | |
| ECCN (US) | EAR99 | |
| Maximum Power Dissipation (mW) | 165 | |
| Current - Dark (Id) (Max) | 50 nA | |
| Minimum Operating Temperature (°C) | -40 | |
| Maximum Operating Temperature (°C) | 100 | |
| Phototransistor Type | Phototransistor | |
| Package Height | 4.8(Max) | |
| Collector-Emitter Saturation Voltage | 150 mV | |
| Mfr | ams-OSRAM USA INC. | |
| Polarity | NPN | |
| Height | 4.8 mm | |
| Maximum Operating Temperature | + 100 C | |
| Maximum Dark Current (nA) | 50 | |
| Width | 3.4 mm | |
| Diameter | 3.4(Max) | |
| RoHS Status | ROHS3 Compliant | |
| Mounting Style | Through Hole | |
| Material | Silicon | |
| Minimum Operating Temperature | - 40 C | |
| Series | - | |
| Type | Chip | |
| Half Intensity Angle Degrees (°) | 50 | |
| Length | 3.4 mm | |
| Power - Max | 165 mW | |
| Half Intensity Angle Degrees | 25 deg | |
| Part Status | Obsolete | |
| Pd - Power Dissipation | 165 mW | |
| Dark Current | 50 nA | |
