Number of Channels per Chip | 1 | |
Fabrication Technology | NPN Transistor | |
PCB changed | 2 | |
Maximum Collector-Emitter Voltage (V) | 35 | |
ECCN (US) | EAR99 | |
PPAP | No | |
Maximum Power Dissipation (mW) | 200 | |
Automotive | No | |
Minimum Operating Temperature (°C) | -40 | |
Maximum Operating Temperature (°C) | 100 | |
Supplier Package | T-1 3/4 | |
Phototransistor Type | Phototransistor | |
Package Height | 9(Max) | |
Maximum Collector-Emitter Saturation Voltage (V) | 0.14/0.15 | |
Polarity | NPN | |
Lens Shape Type | Domed | |
EU RoHS | Compliant | |
Maximum Dark Current (nA) | 50 | |
Diameter | 5.9(Max) | |
Maximum Rise Time (ns) | 10000 | |
Maximum Collector Current (mA) | 50 | |
Maximum Fall Time (ns) | 10000 | |
Material | Silicon | |
Supplier Temperature Grade | Industrial | |
Maximum Emitter-Collector Voltage (V) | 7 | |
Pin Count | 2 | |
Mounting | Through Hole | |
Type | Chip | |
Viewing Orientation | Top View | |
Half Intensity Angle Degrees (°) | 50 | |
Lead Shape | Through Hole | |
Part Status | Active | |
Peak Wavelength (nm) | 880 | |
Maximum Light Current (uA) | 4800/7700 | |