Number of Channels per Chip | 1 | |
Fabrication Technology | NPN Transistor | |
PCB changed | 2 | |
HTS | 8541.49.70.80 | |
Maximum Collector-Emitter Voltage (V) | 35 | |
ECCN (US) | EAR99 | |
PPAP | No | |
Maximum Power Dissipation (mW) | 165 | |
Automotive | No | |
Minimum Operating Temperature (°C) | -40 | |
Maximum Operating Temperature (°C) | 100 | |
Supplier Package | T-1 | |
Phototransistor Type | Phototransistor | |
Package Height | 5.2(Max) | |
Maximum Collector-Emitter Saturation Voltage (V) | 0.2 | |
Polarity | NPN | |
Lens Shape Type | Domed | |
EU RoHS | Compliant | |
Maximum Dark Current (nA) | 200 | |
Diameter | 4(Max) | |
Maximum Rise Time (ns) | 7000/8000 | |
Maximum Collector Current (mA) | 15 | |
Maximum Fall Time (ns) | 7000/8000 | |
Material | Silicon | |
Pin Count | 2 | |
Cut-Off Filter | Visible Cut-off | |
Mounting | Through Hole | |
Type | IR Chip | |
Viewing Orientation | Top View | |
Half Intensity Angle Degrees (°) | 24 | |
Lead Shape | Through Hole | |
Part Status | Active | |
Peak Wavelength (nm) | 900 | |
Maximum Light Current (uA) | 4500/7200 | |