| Number of Channels per Chip | 1 | |
| Fabrication Technology | NPN Transistor | |
| PCB changed | 2 | |
| Maximum Collector-Emitter Voltage (V) | 35 | |
| ECCN (US) | EAR99 | |
| PPAP | No | |
| Maximum Power Dissipation (mW) | 165 | |
| Automotive | No | |
| Minimum Operating Temperature (°C) | -40 | |
| Maximum Operating Temperature (°C) | 100 | |
| Supplier Package | T-1 | |
| Phototransistor Type | Phototransistor | |
| Package Height | 5.2(Max) | |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.2 | |
| Polarity | NPN | |
| Lens Shape Type | Domed | |
| EU RoHS | Compliant | |
| Maximum Dark Current (nA) | 200 | |
| Diameter | 4(Max) | |
| Maximum Rise Time (ns) | 8000/9000 | |
| Maximum Collector Current (mA) | 15 | |
| Maximum Fall Time (ns) | 8000/9000 | |
| Material | Silicon | |
| Pin Count | 2 | |
| Cut-Off Filter | Visible Cut-off | |
| Mounting | Through Hole | |
| Type | IR Chip | |
| Viewing Orientation | Top View | |
| Half Intensity Angle Degrees (°) | 24 | |
| Lead Shape | Through Hole | |
| Peak Wavelength (nm) | 900 | |
| Maximum Light Current (uA) | 7200/11200 | |
