TISP61089QBDR-S

Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
Bourns, Inc.
TISP61089QBDR-S
147-TISP61089QBDR-S
THYRISTOR 170V 30A 8SOIC

Technical specifications

Unit Weight0.002822 oz
Current - Peak Pulse (10/1000µs)30 A
Gate Trigger Current - Igt5 mA
Holding Current Ih Max- 150 mA
Repetitive Peak Forward Blocking Voltage (V)170
PPAPNo
Product StatusActive
Non Repetitive On-State Current500 mA
RoHSRoHS Compliant
AutomotiveNo
Voltage - Off State170V
TradenameTISP
Supplier PackageSOIC N
Package / Case8-SOIC (0.154", 3.90mm Width)
REACH StatusREACH Unaffected
Number of Elements4
Maximum Holding Current (mA)150(Min)
EU RoHSCompliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
On-State RMS Current - It RMS-
ECCNEAR99
Mounting TypeSurface Mount
Standard Package NameSO
Pin Count8
MountingSurface Mount
Lead ShapeGull-wing
Repetitive Peak Reverse Voltage (V)170
Rated Repetitive Off-State Voltage VDRM- 170 V
HTSUS8541.30.0080
PackageTape & Reel (TR)
USHTS8541300080
Off-State Capacitance CO100 pF
Repetitive Peak Off-State Current (mA)0.005
PCB changed8
HTS8541.30.00.80
ECCN (US)EAR99
Supplier Device Package8-SOIC
Minimum Operating Temperature (°C)-40
Maximum Breakover Voltage (V)64
Maximum Operating Temperature (°C)150
Vf - Forward Voltage3 V
Off-State Leakage Current @ VDRM IDRM- 5 uA
MfrBourns Inc.
Maximum Operating Temperature+ 85 C
Voltage - Breakover64V
RoHS StatusROHS3 Compliant
Mounting StyleSMD/SMT
Current - Hold (Ih)150 mA
Surge Current Rating (A)0.5
Package Length5(Max)
Minimum Operating Temperature- 40 C
SeriesTISP61089Q
TypeQuad Forward Conducting P-Gate Thyristors
Breakover Voltage VBO- 64 V
Part StatusActive
Gate Trigger Voltage - Vgt2.5 V
Capacitance100pF
Package Width4(Max)
Base Product NumberTISP610