TISP6NTP2CDR-S (In Stock:20056)

Mixed Technology
Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
TISP6NTP2CDR-S
149-TISP6NTP2CDR-S
TVS DEVICE MIXED -112V 8SOIC

Technical specifications

Unit Weight0.002822 oz
Gate Trigger Current - Igt5 mA
Holding Current Ih Max- 150 mA
Repetitive Peak Forward Blocking Voltage (V)170
PPAPNo
Product StatusActive
Non Repetitive On-State Current7 A
RoHSRoHS Compliant
AutomotiveNo
TradenameTISP
Supplier PackageSOIC N
Breakover Current IBO Max7 A
Package / Case8-SOIC (0.154", 3.90mm Width)
TechnologyMixed Technology
REACH StatusREACH Unaffected
Maximum Holding Current (mA)150(Min)
EU RoHSCompliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
On-State RMS Current - It RMS-
ECCNEAR99
Mounting TypeSurface Mount
Standard Package NameSO
Pin Count8
MountingSurface Mount
Lead ShapeGull-wing
Repetitive Peak Reverse Voltage (V)170
Rated Repetitive Off-State Voltage VDRM- 170 V
HTSUS8536.30.8000
PackageTape & Reel (TR)
USHTS8541300080
Repetitive Peak Off-State Current (mA)0.005
PCB changed8
HTSCOMPONENTS
ECCN (US)EAR99
Supplier Device Package8-SOIC
Minimum Operating Temperature (°C)-40
Maximum Peak Pulse Current (A)90
Maximum Operating Temperature (°C)85
Voltage - Clamping-112V
Vf - Forward Voltage3 V
Package Height1.55(Max)
Off-State Leakage Current @ VDRM IDRM5 uA
MfrBourns Inc.
Height1.55 mm
Maximum Operating Temperature+ 85 C
Width4 mm
RoHS StatusROHS3 Compliant
Mounting StyleSMD/SMT
ApplicationsSLIC
Surge Current Rating (A)7
Current Rating5 uA
Package Length5(Max)
Minimum Operating Temperature- 40 C
SeriesTISP6NTP2C
TypeQuad Forward Conducting P-Gate Thyristors
Length5 mm
Breakover Voltage VBO- 112 V
Part StatusActive
Gate Trigger Voltage - Vgt2.5 V
Package Width4(Max)
Number of Circuits4
Base Product NumberTISP6N

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