BS250FTA (In Stock:1010)

Single FETs, MOSFETs
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BS250FTA
278-BS250FTA
Explore BS250FTA P-Channel MOSFET from Diodes Inc – 45V, 90mA, SOT-23. View full specs, datasheet PDF, features, and applications. Ideal for switching and signal control.
1+:$0.53572
10+:$0.44870
30+:$0.40462
100+:$0.38949
500+:$0.26673
1000+:$0.27386
InStock Quantity: 1010

BS250FTA Description

📌 BS250FTA Overview

BS250FTA is a P-Channel MOSFET manufactured by Diodes Incorporated, designed for low-power switching and signal control applications. This transistor operates with a drain-source voltage of 45V and can handle up to 90mA of continuous current at 25°C. Packaged in the compact SOT-23-3 footprint, it is ideal for high-density surface-mount designs where space and efficiency are critical.

BS250FTA MOSFET Image

📐 Technical Specifications

Parameter Details
Manufacturer (Mfr) Diodes Incorporated
Part Number BS250FTA
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 45V
Continuous Drain Current (Id @ 25°C) 90mA
Drive Voltage 10V
Rds On (Max) @ Id, Vgs 14 Ohm @ 200mA, 10V
Vgs(th) (Max) 3.5V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) 25pF @ 10V
Power Dissipation 330mW (Ta)
Operating Temperature -55°C to +150°C
Mounting Type Surface Mount
Package / Case TO-236-3, SOT-23-3
Packaging Tape & Reel, Cut Tape, Digi-Reel®
Part Status Active

🔧 Typical Applications

  • Signal Switching Circuits
  • Low Current Power Supplies
  • Battery-Powered Devices
  • Analog Switching
  • Sensor Control Circuits

📄 Download Datasheet

Access the official datasheet for full electrical characteristics and application guidelines:

👉 BS250FTA Datasheet PDF – Diodes Inc.


🧩 Alternative / Equivalent Parts

  • BS250P
  • 2N5461 (similar functionality, different specs)
  • IRLML6402 (SMD P-Channel, lower Rds(on))

📘 Summary

The BS250FTA is a compact, reliable P-channel MOSFET optimized for low-power, low-current switching applications in SOT-23 packaging. It’s ideal for surface-mount designs requiring up to 45V Vds and low gate drive voltages. Its wide availability, simple gate characteristics, and high-temperature tolerance make it a popular choice in prototyping, production, and repair projects.

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Technical specifications

FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds25 pF @ 10 V
Product StatusActive
Supplier Device PackageSOT-23-3
Drain to Source Voltage (Vdss)45 V
Power Dissipation (Max)330mW (Ta)
Package / CaseTO-236-3, SC-59, SOT-23-3
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
MfrDiodes Incorporated
Vgs (Max)±20V
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 150°C (TJ)
FET Feature-
ECCNEAR99
Mounting TypeSurface Mount
Rds On (Max) @ Id, Vgs14Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id3.5V @ 1mA
Series-
Current - Continuous Drain (Id) @ 25°C90mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
HTSUS8541.21.0095
PackageTape & Reel (TR)
Base Product NumberBS250

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