DMT10H032LFDF-7 (In Stock:11)

Single FETs, MOSFETs
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onzuu Part #:
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DMT10H032LFDF-7
278-DMT10H032LFDF-7
Explore DMT10H032LFDF-7 N-Channel MOSFET specs, datasheet, applications, equivalents, and trusted buying sources. Get all technical details and links now.
1+:$0.80371
10+:$0.84815
30+:$0.83462
InStock Quantity: 11

DMT10H032LFDF-7 Description

DMT10H032LFDF-7 is an N-Channel MOSFET designed by Diodes Incorporated, widely used in power management, DC-DC converters, motor control, and general switching applications. Below you will find its technical specifications, datasheet, application examples, and purchasing options.

Key Specifications

Parameter Value
Part Number DMT10H032LFDF-7
Type N-Channel MOSFET
Vds (Drain-Source Voltage) 100V
Id (Continuous Drain Current) 32A
Rds(on) @ Vgs=10V 10 mΩ max
Package LFPAK56 (Power SO-8)
Manufacturer Diodes Incorporated

Download DMT10H032LFDF-7 Datasheet

Click here to download the official datasheet (PDF)

Applications

  • DC-DC converters
  • Motor drive circuits
  • Battery protection circuits
  • Load switches
  • General purpose power management

Where to Buy DMT10H032LFDF-7

Distributor Price (USD) Stock Link
Onzuu $0.75 In Stock Buy Now

Alternative & Equivalent Models

  • IRLZ44N - Lower cost general-purpose N-MOSFET
  • STP75NF75 - 75V, 80A, lower Rds(on)
  • IXTP100N10 - 100V, 100A N-MOSFET for higher current applications

Frequently Asked Questions (FAQ)

Q1: What is the Rds(on) value of DMT10H032LFDF-7?
A: The maximum Rds(on) is 10mΩ at Vgs=10V.
Q2: Is DMT10H032LFDF-7 suitable for motor control?
A: Yes, it is commonly used in motor drivers and DC-DC converters.
Q3: What is the package of this MOSFET?
A: LFPAK56 (Power SO-8), suitable for compact high-power designs.

Summary

DMT10H032LFDF-7 is a reliable and efficient N-Channel MOSFET widely used in power conversion and motor control applications. With its low Rds(on) and compact LFPAK56 package, it is a preferred choice for space-saving and efficient power circuits.

Onzuu Electronics is a trusted distributor of DMT10H032LFDF-7 and other MOSFET components. Contact us for large volume quotations.

Technical specifications

FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds683 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs11.9 nC @ 10 V
Product StatusActive
Supplier Device PackageU-DFN2020-6 (Type F)
Drain to Source Voltage (Vdss)100 V
Power Dissipation (Max)1.3W (Ta)
Package / Case6-UDFN Exposed Pad
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
MfrDiodes Incorporated
Vgs (Max)±20V
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 150°C (TJ)
FET Feature-
ECCNEAR99
Mounting TypeSurface Mount
Rds On (Max) @ Id, Vgs32mOhm @ 6A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Series-
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
HTSUS8541.29.0095
PackageTape & Reel (TR)
Base Product NumberDMT10

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