DMT10H9M9SH3

Single FETs, MOSFETs
Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
DMT10H9M9SH3
278-DMT10H9M9SH3
MOSFET BVDSS: 61V~100V TO251 TUB

DMT10H9M9SH3 Description

N-Channel 100 V 84A (Tc) 114W (Tc) Through Hole TO-251

Technical specifications

FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds2085 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Product StatusActive
Supplier Device PackageTO-251
Drain to Source Voltage (Vdss)100 V
Power Dissipation (Max)114W (Tc)
Package / CaseTO-251-3 Stub Leads, IPak
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
MfrDiodes Incorporated
Vgs (Max)±20V
RoHS StatusROHS3 Compliant
Operating Temperature-55°C ~ 150°C (TJ)
FET Feature-
ECCNEAR99
Mounting TypeThrough Hole
Rds On (Max) @ Id, Vgs9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Series-
Current - Continuous Drain (Id) @ 25°C84A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
HTSUS8541.29.0095
PackageTube
Base Product NumberDMT10

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