DRDN010W-7

Single Bipolar Transistors
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DRDN010W-7 Description

Bipolar (BJT) Transistor NPN + Diode (Isolated) 18 V 1 A 100MHz 200 mW Surface Mount SOT-363

Technical specifications

Operating Temperature-55°C ~ 150°C (TJ)
Frequency - Transition100MHz
Current - Collector (Ic) (Max)1 A
Vce Saturation (Max) @ Ib, Ic500mV @ 30mA, 300mA
ECCNEAR99
Mounting TypeSurface Mount
Product StatusObsolete
Voltage - Collector Emitter Breakdown (Max)18 V
Supplier Device PackageSOT-363
Series-
Transistor TypeNPN + Diode (Isolated)
Package / Case6-TSSOP, SC-88, SOT-363
Power - Max200 mW
REACH StatusREACH Unaffected
MfrDiodes Incorporated
Current - Collector Cutoff (Max)1µA (ICBO)
HTSUS8541.21.0075
PackageTape & Reel (TR)
RoHS StatusROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 100mA, 1V
Base Product NumberDRDN010
Moisture Sensitivity Level (MSL)1 (Unlimited)

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