2N3904 (In Stock:30576)
Single Bipolar Transistors Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
2N3904
276-2N3904
BJT TO-92 40V 200MA
1+:$0.01798
10+:$0.01663
100+:$0.01348
1000+:$0.01196
2N3904 Description
Bipolar (BJT) Transistor NPN 40 V 200 mA 300MHz 625 mW Through Hole TO-92
Technical specifications
| Unit Weight | 0.011852 oz | |
| Configuration | Single | |
| PPAP | No | |
| Maximum Base Emitter Saturation Voltage (V) | 0.85@1mA@10mA|0.95@5mA@50mA | |
| Product Status | Active | |
| Voltage - Collector Emitter Breakdown (Max) | 40 V | |
| RoHS | RoHS Compliant | |
| Automotive | No | |
| Tradename | 2N3904 | |
| Supplier Package | TO-92 | |
| Transistor Type | NPN | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| REACH Status | Vendor Undefined | |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.2@1mA@10mA|0.3@5mA@50mA | |
| Collector- Base Voltage VCBO | 60 V | |
| EU RoHS | Compliant | |
| Moisture Sensitivity Level (MSL) | Not Applicable | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Maximum Collector Base Voltage (V) | 60 | |
| Frequency - Transition | 300MHz | |
| Current - Collector (Ic) (Max) | 200 mA | |
| ECCN | EAR99 | |
| Maximum Emitter Base Voltage (V) | 6 | |
| Supplier Temperature Grade | Commercial | |
| Mounting Type | Through Hole | |
| Standard Package Name | TO | |
| Pin Count | 3 | |
| Mounting | Through Hole | |
| Lead Shape | Through Hole | |
| Collector- Emitter Voltage VCEO Max | 40 V | |
| HTSUS | 8541.21.0075 | |
| Package | Tape & Reel (TR) | |
| USHTS | 8541210095 | |
| Category | Bipolar Small Signal | |
| PCB changed | 3 | |
| HTS | 8541.29.00.95 | |
| Number of Elements per Chip | 1 | |
| Maximum Collector-Emitter Voltage (V) | 40 | |
| ECCN (US) | EAR99 | |
| Maximum Power Dissipation (mW) | 625 | |
| Supplier Device Package | TO-92 | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 150 | |
| Maximum DC Collector Current | 200 mA | |
| Collector-Emitter Saturation Voltage | 300 mV | |
| Mfr | Diotec Semiconductor | |
| Maximum Operating Temperature | + 150 C | |
| RoHS Status | Not applicable | |
| Mounting Style | Through Hole | |
| Maximum Transition Frequency (MHz) | 300(Min) | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA | |
| Material | Si | |
| Transistor Polarity | NPN | |
| Minimum Operating Temperature | - 55 C | |
| Emitter- Base Voltage VEBO | 6 V | |
| Series | 2N/2/3/4/5 | |
| Type | NPN | |
| Minimum DC Current Gain | 100@10mA@1V|30@100mA@1V|[email protected]@1V|60@50mA@1V|70@1mA@1V | |
| Maximum DC Collector Current (A) | 0.2 | |
| Gain Bandwidth Product fT | 300 MHz | |
| Power - Max | 625 mW | |
| DC Current Gain hFE Max | 100 | |
| Part Status | Active | |
| Current - Collector Cutoff (Max) | 50nA | |
| Pd - Power Dissipation | 625 mW | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
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