MPSA56 (In Stock:27192)

Single Bipolar Transistors
Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
1+:$0.04042
InStock Quantity: 27192

MPSA56 Description

Bipolar (BJT) Transistor PNP 80 V 500 mA 50MHz 625 mW Through Hole TO-92

Technical specifications

Unit Weight0.001376 oz
ConfigurationSingle
PPAPNo
Product StatusActive
Voltage - Collector Emitter Breakdown (Max)80 V
RoHSRoHS Compliant
AutomotiveNo
TradenameMPSA56
Supplier PackageTO-92
Transistor TypePNP
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Maximum Collector-Emitter Saturation Voltage (V)0.25@10mA@100mA
Collector- Base Voltage VCBO80 V
EU RoHSCompliant
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Collector Base Voltage (V)80
Frequency - Transition50MHz
Current - Collector (Ic) (Max)500 mA
ECCNEAR99
Maximum Emitter Base Voltage (V)4
Grade-
Mounting TypeThrough Hole
Standard Package NameTO
Pin Count3
MountingThrough Hole
Qualification-
Collector- Emitter Voltage VCEO Max80 V
PackageBulk
USHTS8541210095
CategoryBipolar Small Signal
PCB changed3
HTS8541.29.00.95
Number of Elements per Chip1
Maximum Collector-Emitter Voltage (V)80
ECCN (US)EAR99
Maximum Power Dissipation (mW)625
Supplier Device PackageTO-92
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)150
Maximum DC Collector Current500 mA
Collector-Emitter Saturation Voltage250 mV
MfrDiotec Semiconductor
Maximum Operating Temperature+ 150 C
Mounting StyleThrough Hole
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
MaterialSi
Transistor PolarityPNP
Minimum Operating Temperature- 55 C
Emitter- Base Voltage VEBO4 V
SeriesMPSA
TypePNP
Minimum DC Current Gain100@100mA@1V|100@10mA@1V
Maximum DC Collector Current (A)0.5
Gain Bandwidth Product fT50 MHz
Power - Max625 mW
DC Current Gain hFE Max100
Part StatusActive
Current - Collector Cutoff (Max)100nA (ICBO)
Pd - Power Dissipation625 mW
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 1V

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