Unit Weight | 0.068784 oz | |
Configuration | Single | |
Id - Continuous Drain Current | 13 A | |
Input Capacitance (Ciss) (Max) @ Vds | 2055 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V | |
Channel Mode | Enhancement | |
Fall Time | 100 ns | |
Product Status | Active | |
RoHS | RoHS Compliant By Exemption | |
Drain to Source Voltage (Vdss) | 500 V | |
Transistor Type | 1 N-Channel | |
Package / Case | TO-220-3 Full Pack | |
Number of Channels | 1 Channel | |
Typical Turn-On Delay Time | 25 ns | |
Technology | MOSFET (Metal Oxide) | |
REACH Status | REACH Affected | |
Rds On - Drain-Source Resistance | 480 mOhms | |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
ECCN | EAR99 | |
Mounting Type | Through Hole | |
Rds On (Max) @ Id, Vgs | 480mOhm @ 6.5A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Rise Time | 100 ns | |
Current - Continuous Drain (Id) @ 25°C | 13A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Vgs th - Gate-Source Threshold Voltage | 4 V | |
HTSUS | 0000.00.0000 | |
Package | Tube | |
USHTS | 8541290095 | |
FET Type | N-Channel | |
Qg - Gate Charge | 43 nC | |
Supplier Device Package | TO-220F | |
Power Dissipation (Max) | 48W (Tc) | |
Mfr | Fairchild Semiconductor | |
Vgs (Max) | ±30V | |
Height | 16.3 mm | |
Maximum Operating Temperature | + 150 C | |
Width | 4.7 mm | |
RoHS Status | ROHS3 Compliant | |
Mounting Style | Through Hole | |
FET Feature | - | |
Vgs - Gate-Source Voltage | - 30 V, + 30 V | |
Typical Turn-Off Delay Time | 130 ns | |
Transistor Polarity | N-Channel | |
Minimum Operating Temperature | - 55 C | |
Vds - Drain-Source Breakdown Voltage | 500 V | |
Series | QFET® | |
Type | MOSFET | |
Length | 10.67 mm | |
Forward Transconductance - Min | 15 S | |
Pd - Power Dissipation | 48 W | |
Base Product Number | FQPF1 |
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