FQPF13N50C (In Stock:369)

Single FETs, MOSFETs
Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
FQPF13N50C
278-FQPF13N50C
QFC 500V 480MOHM TO220F
1+:$1.30000
InStock Quantity: 369

FQPF13N50C Description

N-Channel 500 V 13A (Tc) 48W (Tc) Through Hole TO-220F

Technical specifications

Unit Weight0.068784 oz
ConfigurationSingle
Id - Continuous Drain Current13 A
Input Capacitance (Ciss) (Max) @ Vds2055 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs56 nC @ 10 V
Channel ModeEnhancement
Fall Time100 ns
Product StatusActive
RoHSRoHS Compliant By Exemption
Drain to Source Voltage (Vdss)500 V
Transistor Type1 N-Channel
Package / CaseTO-220-3 Full Pack
Number of Channels1 Channel
Typical Turn-On Delay Time25 ns
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Affected
Rds On - Drain-Source Resistance480 mOhms
Moisture Sensitivity Level (MSL)3 (168 Hours)
Operating Temperature-55°C ~ 150°C (TJ)
ECCNEAR99
Mounting TypeThrough Hole
Rds On (Max) @ Id, Vgs480mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Rise Time100 ns
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs th - Gate-Source Threshold Voltage4 V
HTSUS0000.00.0000
PackageTube
USHTS8541290095
FET TypeN-Channel
Qg - Gate Charge43 nC
Supplier Device PackageTO-220F
Power Dissipation (Max)48W (Tc)
MfrFairchild Semiconductor
Vgs (Max)±30V
Height16.3 mm
Maximum Operating Temperature+ 150 C
Width4.7 mm
RoHS StatusROHS3 Compliant
Mounting StyleThrough Hole
FET Feature-
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-Off Delay Time130 ns
Transistor PolarityN-Channel
Minimum Operating Temperature- 55 C
Vds - Drain-Source Breakdown Voltage500 V
SeriesQFET®
TypeMOSFET
Length10.67 mm
Forward Transconductance - Min15 S
Pd - Power Dissipation48 W
Base Product NumberFQPF1

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