| Category | Power MOSFET | |
| Configuration | Single | |
| PCB changed | 2 | |
| Typical Turn-Off Delay Time (ns) | 170(Max) | |
| HTS | COMPONENTS | |
| Maximum Gate Source Leakage Current (nA) | 100 | |
| Number of Elements per Chip | 1 | |
| ECCN (US) | EAR99 | |
| Typical Rise Time (ns) | 190(Max) | |
| PPAP | No | |
| Maximum Power Dissipation (mW) | 150000 | |
| Channel Mode | Enhancement | |
| Typical Turn-On Delay Time (ns) | 35(Max) | |
| Automotive | No | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 150 | |
| Supplier Package | TO-3 | |
| Maximum IDSS (uA) | 25 | |
| Typical Fall Time (ns) | 130(Max) | |
| Package Height | 7.74(Max) | |
| Typical Gate to Source Charge (nC) | 19(Max) | |
| Maximum Positive Gate Source Voltage (V) | 20 | |
| Channel Type | N | |
| EU RoHS | Not Compliant | |
| Maximum Continuous Drain Current (A) | 12 | |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 48 | |
| Maximum Gate Source Voltage (V) | ±20 | |
| Maximum Drain Source Voltage (V) | 500 | |
| Maximum Drain Source Resistance (mOhm) | 500@10V | |
| Package Length | 39.37(Max) | |
| Typical Gate Charge @ 10V (nC) | 120(Max) | |
| Standard Package Name | TO | |
| Maximum Diode Forward Voltage (V) | 1.7 | |
| Pin Count | 3 | |
| Mounting | Through Hole | |
| Operating Junction Temperature (°C) | -55 to 150 | |
| Minimum Gate Threshold Voltage (V) | 2 | |
| Tab | Tab | |
| Lead Shape | Through Hole | |
| Part Status | Active | |
| Typical Gate to Drain Charge (nC) | 70(Max) | |
| Maximum Gate Threshold Voltage (V) | 4 | |
| Package Width | 25.53(Max) | |
| Typical Gate Charge @ Vgs (nC) | 120(Max)@10V | |
