BCR10PNB6327XT

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Infineon Technologies
BCR10PNB6327XT
293-BCR10PNB6327XT
TRANS NPN/PNP PREBIAS SOT363

BCR10PNB6327XT Description

Technical specifications

Frequency - Transition130MHz
Current - Collector (Ic) (Max)100mA
Resistor - Base (R1)10kOhms
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
ECCNEAR99
Mounting TypeSurface Mount
Product StatusDiscontinued at Digi-Key
Voltage - Collector Emitter Breakdown (Max)50V
Supplier Device PackagePG-SOT363-PO
Series-
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Package / Case6-VSSOP, SC-88, SOT-363
Power - Max250mW
REACH StatusREACH Unaffected
MfrInfineon Technologies
Resistor - Emitter Base (R2)10kOhms
Current - Collector Cutoff (Max)-
HTSUS8541.21.0095
PackageTape & Reel (TR)
RoHS StatusROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Base Product NumberBCR10
Moisture Sensitivity Level (MSL)1 (Unlimited)