BSD223P

FET, MOSFET Arrays
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BSD223P Description

Mosfet Array 20V 390mA 250mW Surface Mount PG-SOT363-PO

Technical specifications

Operating Temperature-55°C ~ 150°C (TJ)
FET FeatureLogic Level Gate
Configuration2 P-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds56pF @ 15V
Gate Charge (Qg) (Max) @ Vgs0.62nC @ 4.5V
ECCNEAR99
Mounting TypeSurface Mount
Product StatusObsolete
Rds On (Max) @ Id, Vgs1.2Ohm @ 390mA, 4.5V
Vgs(th) (Max) @ Id1.2V @ 1.5µA
Supplier Device PackagePG-SOT363-PO
Drain to Source Voltage (Vdss)20V
SeriesOptiMOS™
Package / Case6-VSSOP, SC-88, SOT-363
TechnologyMOSFET (Metal Oxide)
Power - Max250mW
REACH StatusREACH Unaffected
MfrInfineon Technologies
Current - Continuous Drain (Id) @ 25°C390mA
HTSUS8541.21.0095
PackageTape & Reel (TR)
Base Product NumberBSD223
Moisture Sensitivity Level (MSL)1 (Unlimited)

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