| Operating Temperature | -55°C ~ 150°C (TJ) | |
| FET Feature | - | |
| FET Type | N-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 25 V | |
| ECCN | EAR99 | |
| Mounting Type | Surface Mount | |
| Product Status | Obsolete | |
| Rds On (Max) @ Id, Vgs | 20Ohm @ 190mA, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Supplier Device Package | PG-SOT223-4 | |
| Drain to Source Voltage (Vdss) | 800 V | |
| Series | SIPMOS® | |
| Power Dissipation (Max) | 1.8W (Ta) | |
| Package / Case | TO-261-4, TO-261AA | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Mfr | Infineon Technologies | |
| Current - Continuous Drain (Id) @ 25°C | 190mA (Ta) | |
| Vgs (Max) | ±20V | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| HTSUS | 8541.29.0095 | |
| Package | Tape & Reel (TR) | |
| RoHS Status | ROHS3 Compliant | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
