| FET Type | P-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 262 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 15.1 nC @ 10 V | |
| Product Status | Obsolete | |
| Supplier Device Package | PG-SOT223-4 | |
| Drain to Source Voltage (Vdss) | 250 V | |
| Power Dissipation (Max) | 1.8W (Ta) | |
| Package / Case | TO-261-4, TO-261AA | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Mfr | Infineon Technologies | |
| Vgs (Max) | ±20V | |
| RoHS Status | RoHS non-compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| FET Feature | - | |
| ECCN | EAR99 | |
| Mounting Type | Surface Mount | |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 430mA, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 370µA | |
| Series | SIPMOS® | |
| Current - Continuous Drain (Id) @ 25°C | 430mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| HTSUS | 8541.29.0095 | |
| Package | Tape & Reel (TR) | |
| Base Product Number | BSP317 | |
