IPAW60R280CEXKSA1
Single FETs, MOSFETs Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
IPAW60R280CEXKSA1
278-IPAW60R280CEXKSA1
MOSFET N-CH 600V 19.3A TO220
IPAW60R280CEXKSA1 Description
N-Channel 600 V 19.3A (Tc) 32W (Tc) Through Hole PG-TO220 Full Pack, Wide Creepage
Technical specifications
| FET Type | N-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V | |
| Product Status | Obsolete | |
| Supplier Device Package | PG-TO220 Full Pack, Wide Creepage | |
| Drain to Source Voltage (Vdss) | 600 V | |
| Power Dissipation (Max) | 32W (Tc) | |
| Package / Case | TO-220-3 Full Pack, Variant | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Mfr | Infineon Technologies | |
| Vgs (Max) | ±20V | |
| RoHS Status | ROHS3 Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| FET Feature | - | |
| ECCN | EAR99 | |
| Mounting Type | Through Hole | |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 6.5A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 430µA | |
| Series | CoolMOS™ | |
| Current - Continuous Drain (Id) @ 25°C | 19.3A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| HTSUS | 8541.29.0095 | |
| Package | Tube | |
| Base Product Number | IPAW60 |
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