IPD60R460CEATMA1
Single FETs, MOSFETs Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
IPD60R460CEATMA1
278-IPD60R460CEATMA1
MOSFET N-CH 600V 9.1A TO252-3
IPD60R460CEATMA1 Description
N-Channel 600 V 9.1A (Tc) 74W (Tc) Surface Mount PG-TO252-3
Technical specifications
| FET Type | N-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V | |
| Product Status | Obsolete | |
| Supplier Device Package | PG-TO252-3 | |
| Drain to Source Voltage (Vdss) | 600 V | |
| Power Dissipation (Max) | 74W (Tc) | |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Mfr | Infineon Technologies | |
| Vgs (Max) | ±20V | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| FET Feature | - | |
| ECCN | EAR99 | |
| Mounting Type | Surface Mount | |
| Rds On (Max) @ Id, Vgs | 460mOhm @ 3.4A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 280µA | |
| Series | CoolMOS™ CE | |
| Current - Continuous Drain (Id) @ 25°C | 9.1A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| HTSUS | 8541.29.0095 | |
| Package | Tape & Reel (TR) | |
| Base Product Number | IPD60R |
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