IPG20N06S2L35ATMA1 (In Stock:8)
FET, MOSFET Arrays Manufacturer:
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onzuu Part #:
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Description:
IPG20N06S2L35ATMA1
289-IPG20N06S2L35ATMA1
MOSFET 2N-CH 55V 20A 8TDSON
1+:$0.92391
10+:$0.97180
30+:$0.88803
IPG20N06S2L35ATMA1 Description
Mosfet Array 55V 20A 65W Surface Mount PG-TDSON-8-4
Technical specifications
| Configuration | 2 N-Channel (Dual) | |
| Input Capacitance (Ciss) (Max) @ Vds | 790pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V | |
| Product Status | Active | |
| Supplier Device Package | PG-TDSON-8-4 | |
| Drain to Source Voltage (Vdss) | 55V | |
| Package / Case | 8-PowerVDFN | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Mfr | Infineon Technologies | |
| RoHS Status | ROHS3 Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| FET Feature | Logic Level Gate | |
| ECCN | EAR99 | |
| Grade | Automotive | |
| Mounting Type | Surface Mount | |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 15A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 27µA | |
| Series | OptiMOS™ | |
| Qualification | AEC-Q101 | |
| Power - Max | 65W | |
| Current - Continuous Drain (Id) @ 25°C | 20A | |
| HTSUS | 8541.29.0095 | |
| Package | Tape & Reel (TR) | |
| Base Product Number | IPG20N |
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