IPI100N06S3L04XK (In Stock:83)

Single FETs, MOSFETs
Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
IPI100N06S3L04XK
278-IPI100N06S3L04XK
MOSFET N-CH 55V 100A TO262-3

IPI100N06S3L04XK Description

N-Channel 55 V 100A (Tc) 214W (Tc) Through Hole PG-TO262-3

Technical specifications

FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds17270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs362 nC @ 10 V
Product StatusObsolete
Supplier Device PackagePG-TO262-3
Drain to Source Voltage (Vdss)55 V
Power Dissipation (Max)214W (Tc)
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
MfrInfineon Technologies
Vgs (Max)±16V
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 175°C (TJ)
FET Feature-
ECCNEAR99
Mounting TypeThrough Hole
Rds On (Max) @ Id, Vgs3.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id2.2V @ 150µA
SeriesOptiMOS™
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
HTSUS8541.29.0095
PackageTube
Base Product NumberIPI100N

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