FET Type | N-Channel | |
Input Capacitance (Ciss) (Max) @ Vds | 1850 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V | |
Product Status | Last Time Buy | |
Supplier Device Package | PG-VSON-4 | |
Drain to Source Voltage (Vdss) | 650 V | |
Power Dissipation (Max) | 151W (Tc) | |
Package / Case | 4-PowerTSFN | |
Technology | MOSFET (Metal Oxide) | |
REACH Status | REACH Unaffected | |
Mfr | Infineon Technologies | |
Vgs (Max) | ±20V | |
RoHS Status | ROHS3 Compliant | |
Moisture Sensitivity Level (MSL) | 2A (4 Weeks) | |
Operating Temperature | -40°C ~ 150°C (TJ) | |
FET Feature | - | |
ECCN | EAR99 | |
Mounting Type | Surface Mount | |
Rds On (Max) @ Id, Vgs | 210mOhm @ 7.3A, 10V | |
Vgs(th) (Max) @ Id | 4.5V @ 700µA | |
Series | CoolMOS™ CFD2 | |
Current - Continuous Drain (Id) @ 25°C | 16.6A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
HTSUS | 8541.29.0095 | |
Package | Tape & Reel (TR) | |
Base Product Number | IPL65R210 |
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