IPP037N08N3GHKSA1

Single FETs, MOSFETs
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onzuu Part #:
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Description:
IPP037N08N3GHKSA1
278-IPP037N08N3GHKSA1
MOSFET N-CH 80V 100A TO220-3

IPP037N08N3GHKSA1 Description

N-Channel 80 V 100A (Tc) 214W (Tc) Through Hole PG-TO220-3

Technical specifications

FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds8110 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs117 nC @ 10 V
Product StatusObsolete
Supplier Device PackagePG-TO220-3
Drain to Source Voltage (Vdss)80 V
Power Dissipation (Max)214W (Tc)
Package / CaseTO-220-3
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
MfrInfineon Technologies
Vgs (Max)±20V
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 175°C (TJ)
FET Feature-
ECCNEAR99
Mounting TypeThrough Hole
Rds On (Max) @ Id, Vgs3.75mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.5V @ 155µA
SeriesOptiMOS™
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
HTSUS8541.29.0095
PackageTube
Base Product NumberIPP037N

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