IPP12CNE8N G

Single FETs, MOSFETs
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Description:
IPP12CNE8N G
278-IPP12CNE8N G
MOSFET N-CH 85V 67A TO220-3

IPP12CNE8N G Description

N-Channel 85 V 67A (Tc) 125W (Tc) Through Hole PG-TO220-3

Technical specifications

FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds4340 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs64 nC @ 10 V
Product StatusObsolete
Supplier Device PackagePG-TO220-3
Drain to Source Voltage (Vdss)85 V
Power Dissipation (Max)125W (Tc)
Package / CaseTO-220-3
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
MfrInfineon Technologies
Vgs (Max)±20V
Moisture Sensitivity Level (MSL)3 (168 Hours)
Operating Temperature-55°C ~ 175°C (TJ)
FET Feature-
ECCNEAR99
Mounting TypeThrough Hole
Rds On (Max) @ Id, Vgs12.9mOhm @ 67A, 10V
Vgs(th) (Max) @ Id4V @ 83µA
SeriesOptiMOS™
Current - Continuous Drain (Id) @ 25°C67A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
HTSUS8541.29.0095
PackageTube
Base Product NumberIPP12C

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