IPS12CN10LGBKMA1

Single FETs, MOSFETs
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onzuu Part #:
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Description:
IPS12CN10LGBKMA1
278-IPS12CN10LGBKMA1
MOSFET N-CH 100V 69A TO251-3

IPS12CN10LGBKMA1 Description

N-Channel 100 V 69A (Tc) 125W (Tc) Through Hole PG-TO251-3-11

Technical specifications

FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds5600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs58 nC @ 10 V
Product StatusObsolete
Supplier Device PackagePG-TO251-3-11
Drain to Source Voltage (Vdss)100 V
Power Dissipation (Max)125W (Tc)
Package / CaseTO-251-3 Stub Leads, IPAK
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
MfrInfineon Technologies
Vgs (Max)±20V
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 175°C (TJ)
FET Feature-
ECCNEAR99
Mounting TypeThrough Hole
Rds On (Max) @ Id, Vgs11.8mOhm @ 69A, 10V
Vgs(th) (Max) @ Id2.4V @ 83µA
SeriesOptiMOS™
Current - Continuous Drain (Id) @ 25°C69A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
HTSUS8541.29.0095
PackageTube
Base Product NumberIPS12C

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