IPS60R400CEAKMA1

Single FETs, MOSFETs
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IPS60R400CEAKMA1 Description

N-Channel 600 V 14.7A (Tj) 112W (Tc) Through Hole PG-TO251-3

Technical specifications

FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs32 nC @ 10 V
Product StatusObsolete
Supplier Device PackagePG-TO251-3
Drain to Source Voltage (Vdss)600 V
Power Dissipation (Max)112W (Tc)
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
MfrInfineon Technologies
Vgs (Max)±20V
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)3 (168 Hours)
Operating Temperature-40°C ~ 150°C (TJ)
FET Feature-
ECCNEAR99
Mounting TypeThrough Hole
Rds On (Max) @ Id, Vgs400mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id3.5V @ 300µA
SeriesCoolMOS™ CE
Current - Continuous Drain (Id) @ 25°C14.7A (Tj)
Drive Voltage (Max Rds On, Min Rds On)10V
HTSUS8541.29.0095
PackageTube
Base Product NumberIPS60R400

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