| Operating Temperature | -40°C ~ 150°C (TJ) | |
| FET Feature | - | |
| FET Type | N-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 6140 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 4.5 V | |
| ECCN | EAR99 | |
| Mounting Type | Surface Mount | |
| Product Status | Obsolete | |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 32A, 10V | |
| Vgs(th) (Max) @ Id | 2.35V @ 150µA | |
| Supplier Device Package | DIRECTFET™ MT | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Series | HEXFET® | |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) | |
| Package / Case | DirectFET™ Isometric MT | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Mfr | Infineon Technologies | |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 180A (Tc) | |
| Vgs (Max) | ±20V | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| HTSUS | 8541.29.0095 | |
| Package | Tape & Reel (TR) | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
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