IRF7475PBF

Single FETs, MOSFETs
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IRF7475PBF Description

N-Channel 12 V 11A (Ta) 2.5W (Ta) Surface Mount 8-SO

Technical specifications

FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds1590 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs19 nC @ 4.5 V
Product StatusObsolete
Supplier Device Package8-SO
Drain to Source Voltage (Vdss)12 V
Power Dissipation (Max)2.5W (Ta)
Package / Case8-SOIC (0.154", 3.90mm Width)
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
MfrInfineon Technologies
Vgs (Max)±12V
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 150°C (TJ)
FET Feature-
ECCNEAR99
Mounting TypeSurface Mount
Rds On (Max) @ Id, Vgs15mOhm @ 8.8A, 4.5V
Vgs(th) (Max) @ Id2V @ 250µA
SeriesHEXFET®
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.8V, 4.5V
HTSUS8541.29.0095
PackageTube
Base Product NumberIRF7475

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