Operating Temperature | -55°C ~ 175°C (TJ) | |
FET Feature | - | |
FET Type | N-Channel | |
Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 10 V | |
ECCN | EAR99 | |
Mounting Type | Through Hole | |
Product Status | Obsolete | |
Rds On (Max) @ Id, Vgs | 9.2mOhm @ 30A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Supplier Device Package | IPAK (TO-251AA) | |
Drain to Source Voltage (Vdss) | 40 V | |
Series | HEXFET® | |
Power Dissipation (Max) | 140W (Tc) | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
Technology | MOSFET (Metal Oxide) | |
REACH Status | REACH Unaffected | |
Mfr | Infineon Technologies | |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) | |
Vgs (Max) | ±20V | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
HTSUS | 8541.29.0095 | |
Package | Tube | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
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