IRFU3504PBF

Single FETs, MOSFETs
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IRFU3504PBF Description

N-Channel 40 V 30A (Tc) 140W (Tc) Through Hole IPAK (TO-251AA)

Technical specifications

Operating Temperature-55°C ~ 175°C (TJ)
FET Feature-
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds2150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs71 nC @ 10 V
ECCNEAR99
Mounting TypeThrough Hole
Product StatusObsolete
Rds On (Max) @ Id, Vgs9.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageIPAK (TO-251AA)
Drain to Source Voltage (Vdss)40 V
SeriesHEXFET®
Power Dissipation (Max)140W (Tc)
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
MfrInfineon Technologies
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Vgs (Max)±20V
Drive Voltage (Max Rds On, Min Rds On)10V
HTSUS8541.29.0095
PackageTube
Moisture Sensitivity Level (MSL)1 (Unlimited)

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