Operating Temperature | -40°C ~ 150°C (TJ) | |
FET Feature | - | |
FET Type | N-Channel | |
Input Capacitance (Ciss) (Max) @ Vds | 8292 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 158 nC @ 4.5 V | |
ECCN | EAR99 | |
Mounting Type | Surface Mount | |
Product Status | Obsolete | |
Rds On (Max) @ Id, Vgs | 0.75mOhm @ 50A, 10V | |
Vgs(th) (Max) @ Id | 1.1V @ 100µA | |
Supplier Device Package | DIRECTFET™ MD | |
Drain to Source Voltage (Vdss) | 20 V | |
Series | HEXFET®, StrongIRFET™ | |
Power Dissipation (Max) | 2.1W (Ta), 63W (Tc) | |
Package / Case | DirectFET™ Isometric MD | |
Technology | MOSFET (Metal Oxide) | |
REACH Status | REACH Unaffected | |
Mfr | Infineon Technologies | |
Current - Continuous Drain (Id) @ 25°C | 38A (Ta), 211A (Tc) | |
Vgs (Max) | ±12V | |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
HTSUS | 8541.29.0095 | |
Package | Tape & Reel (TR) | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
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