S29GL01GS11WEI029
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S29GL01GS11WEI029 Description
FLASH - NOR Memory IC 1Gbit Parallel 110 ns Wafer
Technical specifications
| Operating Temperature | -40°C ~ 85°C (TA) | |
| Memory Interface | Parallel | |
| ECCN | 3A991B1A | |
| Memory Organization | 64M x 16 | |
| Mounting Type | Surface Mount | |
| Memory Type | Non-Volatile | |
| Product Status | Active | |
| Supplier Device Package | Wafer | |
| Series | GL-S | |
| Access Time | 110 ns | |
| Write Cycle Time - Word, Page | 60ns | |
| Memory Size | 1Gbit | |
| Package / Case | Die | |
| Technology | FLASH - NOR | |
| Voltage - Supply | 2.7V ~ 3.6V | |
| REACH Status | REACH Unaffected | |
| Mfr | Infineon Technologies | |
| HTSUS | 8542.32.0071 | |
| Package | Bulk | |
| Memory Format | FLASH | |
| RoHS Status | ROHS3 Compliant | |
| Base Product Number | S29GL01 | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
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