IXFN200N07 (In Stock:218)
Single FETs, MOSFETs Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
IXFN200N07
278-IXFN200N07
MOSFET N-CH 70V 200A SOT-227B
1+:$32.72400
IXFN200N07 Description
N-Channel 70 V 200A (Tc) 520W (Tc) Chassis Mount SOT-227B
Technical specifications
| Unit Weight | 1.058219 oz | |
| Configuration | Single Dual Source | |
| Typical Turn-Off Delay Time (ns) | 100 | |
| Id - Continuous Drain Current | 200 A | |
| Input Capacitance (Ciss) (Max) @ Vds | 9000 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 480 nC @ 10 V | |
| Typical Rise Time (ns) | 60 | |
| PPAP | No | |
| Channel Mode | Enhancement | |
| Typical Turn-On Delay Time (ns) | 30 | |
| Fall Time | 60 ns | |
| Product Status | Not For New Designs | |
| RoHS | RoHS Compliant | |
| Automotive | No | |
| Drain to Source Voltage (Vdss) | 70 V | |
| Tradename | HyperFET | |
| Supplier Package | SOT-227B | |
| Package / Case | SOT-227-4, miniBLOC | |
| Number of Channels | 1 Channel | |
| Typical Turn-On Delay Time | 30 ns | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Channel Type | N | |
| EU RoHS | Compliant with Exemption | |
| Rds On - Drain-Source Resistance | 6 mOhms | |
| Maximum Continuous Drain Current (A) | 180 | |
| Moisture Sensitivity Level (MSL) | Not Applicable | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Maximum Drain Source Voltage (V) | 70 | |
| ECCN | EAR99 | |
| Mounting Type | Chassis Mount | |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 500mA, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 8mA | |
| Pin Count | 4 | |
| Mounting | Screw | |
| Rise Time | 60 ns | |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| HTSUS | 8541.29.0095 | |
| Package | Tube | |
| Maximum Drain Source Resistance (MOhm) | 6@10V | |
| USHTS | 8541290095 | |
| Typical Gate Charge @ Vgs (nC) | 480@10V | |
| Typical Input Capacitance @ Vds (pF) | 9000@25V | |
| Category | Power MOSFET | |
| PCB changed | 4 | |
| HTS | 8541.29.00.95 | |
| FET Type | N-Channel | |
| Number of Elements per Chip | 1 | |
| ECCN (US) | EAR99 | |
| Maximum Power Dissipation (mW) | 520000 | |
| Supplier Device Package | SOT-227B | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 150 | |
| Power Dissipation (Max) | 520W (Tc) | |
| Typical Fall Time (ns) | 60 | |
| Process Technology | HiperFET | |
| Package Height | 9.6(Max) | |
| Mfr | IXYS | |
| Vgs (Max) | ±20V | |
| Height | 9.6 mm | |
| Maximum Operating Temperature | + 150 C | |
| Width | 25.42 mm | |
| RoHS Status | ROHS3 Compliant | |
| Mounting Style | Screw Mount | |
| FET Feature | - | |
| Maximum Gate Source Voltage (V) | ±20 | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| Typical Turn-Off Delay Time | 100 ns | |
| Material | Si | |
| Transistor Polarity | N-Channel | |
| Package Length | 38.23(Max) | |
| Typical Gate Charge @ 10V (nC) | 480 | |
| Minimum Operating Temperature | - 55 C | |
| Vds - Drain-Source Breakdown Voltage | 70 V | |
| Series | HiPerFET™ | |
| Length | 38.23 mm | |
| Part Status | NRND | |
| Package Width | 25.42(Max) | |
| Pd - Power Dissipation | 520 W | |
| Base Product Number | IXFN200 |
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