IXFN230N10

Single FETs, MOSFETs
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Mfr. Part #:
onzuu Part #:
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Description:
IXFN230N10
278-IXFN230N10
MOSFET N-CH 100V 230A SOT-227B

IXFN230N10 Description

N-Channel 100 V 230A (Tc) 700W (Tc) Chassis Mount SOT-227B

Technical specifications

Unit Weight1.058219 oz
ConfigurationSingle
Id - Continuous Drain Current230 A
Input Capacitance (Ciss) (Max) @ Vds19000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs570 nC @ 10 V
Fall Time60 ns
Product StatusNot For New Designs
RoHSRoHS Compliant
Drain to Source Voltage (Vdss)100 V
TradenameHyperFET
Package / CaseSOT-227-4, miniBLOC
Number of Channels1 Channel
Typical Turn-On Delay Time40 ns
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
Rds On - Drain-Source Resistance6.5 mOhms
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 150°C (TJ)
ECCNEAR99
Mounting TypeChassis Mount
Rds On (Max) @ Id, Vgs6mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4V @ 8mA
Rise Time150 ns
Current - Continuous Drain (Id) @ 25°C230A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
HTSUS8541.29.0095
PackageTube
USHTS8541290095
FET TypeN-Channel
Supplier Device PackageSOT-227B
Power Dissipation (Max)700W (Tc)
MfrIXYS
Vgs (Max)±20V
Height9.6 mm
Maximum Operating Temperature+ 150 C
Width25.42 mm
RoHS StatusROHS3 Compliant
Mounting StyleScrew Mount
FET Feature-
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-Off Delay Time112 ns
Transistor PolarityN-Channel
Minimum Operating Temperature- 55 C
Vds - Drain-Source Breakdown Voltage100 V
SeriesHiPerFET
TypeHiperFET
Length38.23 mm
Pd - Power Dissipation700 W
Base Product NumberIXFN230

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