IXFN230N20T (In Stock:161)

Single FETs, MOSFETs
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Mfr. Part #:
onzuu Part #:
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Description:
IXFN230N20T
278-IXFN230N20T
MOSFET N-CH 200V 220A SOT227B
1+:$44.27482
10+:$42.84569
InStock Quantity: 161

IXFN230N20T Description

N-Channel 200 V 220A (Tc) 1090W (Tc) Chassis Mount SOT-227B

Technical specifications

Unit Weight1.058219 oz
ConfigurationSingle
Id - Continuous Drain Current220 A
Input Capacitance (Ciss) (Max) @ Vds28000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs378 nC @ 10 V
Fall Time17 ns
Product StatusActive
RoHSRoHS Compliant
Drain to Source Voltage (Vdss)200 V
TradenameHiPerFET
Package / CaseSOT-227-4, miniBLOC
Number of Channels1 Channel
Typical Turn-On Delay Time58 ns
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
Rds On - Drain-Source Resistance7.5 mOhms
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 175°C (TJ)
ECCNEAR99
Mounting TypeChassis Mount
Rds On (Max) @ Id, Vgs7.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Rise Time38 ns
Current - Continuous Drain (Id) @ 25°C220A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs th - Gate-Source Threshold Voltage3 V
HTSUS8541.29.0095
PackageTube
USHTS8541290095
FET TypeN-Channel
Supplier Device PackageSOT-227B
Power Dissipation (Max)1090W (Tc)
MfrIXYS
Vgs (Max)±20V
Height12.22 mm
Maximum Operating Temperature+ 175 C
Width25.42 mm
RoHS StatusROHS3 Compliant
Mounting StyleScrew Mount
FET Feature-
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-Off Delay Time62 ns
Transistor PolarityN-Channel
Minimum Operating Temperature- 55 C
Vds - Drain-Source Breakdown Voltage200 V
SeriesHiPerFET™, Trench
TypeGigaMOS Power MOSFET
Length38.23 mm
Pd - Power Dissipation1.09 mW
Base Product NumberIXFN230

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