IXFN24N100 (In Stock:302)

Single FETs, MOSFETs
Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
IXFN24N100
278-IXFN24N100
MOSFET N-CH 1KV 24A SOT-227B
1+:$34.37017
InStock Quantity: 302

IXFN24N100 Description

N-Channel 1000 V 24A (Tc) 568W (Tc) Chassis Mount SOT-227B

Technical specifications

Unit Weight1.058219 oz
ConfigurationSingle
Id - Continuous Drain Current24 A
Input Capacitance (Ciss) (Max) @ Vds8700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs267 nC @ 10 V
Fall Time21 ns
Product StatusNot For New Designs
RoHSRoHS Compliant
Drain to Source Voltage (Vdss)1000 V
TradenameHyperFET
Package / CaseSOT-227-4, miniBLOC
Number of Channels1 Channel
Typical Turn-On Delay Time35 ns
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
Rds On - Drain-Source Resistance390 mOhms
Moisture Sensitivity Level (MSL)Not Applicable
Operating Temperature-55°C ~ 150°C (TJ)
ECCNEAR99
Mounting TypeChassis Mount
Rds On (Max) @ Id, Vgs390mOhm @ 12A, 10V
Vgs(th) (Max) @ Id5.5V @ 8mA
Rise Time35 ns
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
HTSUS8541.29.0095
PackageTube
USHTS8541290095
FET TypeN-Channel
Supplier Device PackageSOT-227B
Power Dissipation (Max)568W (Tc)
MfrIXYS
Vgs (Max)±20V
Height9.6 mm
Maximum Operating Temperature+ 150 C
Width25.42 mm
RoHS StatusROHS3 Compliant
Mounting StyleScrew Mount
FET Feature-
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-Off Delay Time75 ns
Transistor PolarityN-Channel
Minimum Operating Temperature- 55 C
Vds - Drain-Source Breakdown Voltage1 kV
SeriesHiPerFET™
TypeHiperFET
Length38.23 mm
Pd - Power Dissipation568 W
Base Product NumberIXFN24

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