IXFN27N80
Single FETs, MOSFETs Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
IXFN27N80
278-IXFN27N80
MOSFET N-CH 800V 27A SOT-227B
IXFN27N80 Description
N-Channel 800 V 27A (Tc) 520W (Tc) Chassis Mount SOT-227B
Technical specifications
| Unit Weight | 1.058219 oz | |
| Configuration | Single | |
| Id - Continuous Drain Current | 27 A | |
| FET Type | N-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 9740 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 400 nC @ 10 V | |
| Fall Time | 40 ns | |
| Product Status | Not For New Designs | |
| RoHS | RoHS Compliant | |
| Supplier Device Package | SOT-227B | |
| Drain to Source Voltage (Vdss) | 800 V | |
| Tradename | HyperFET | |
| Power Dissipation (Max) | 520W (Tc) | |
| Package / Case | SOT-227-4, miniBLOC | |
| Number of Channels | 1 Channel | |
| Typical Turn-On Delay Time | 30 ns | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Mfr | IXYS | |
| Vgs (Max) | ±20V | |
| Height | 9.6 mm | |
| Maximum Operating Temperature | + 150 C | |
| Width | 25.42 mm | |
| Rds On - Drain-Source Resistance | 300 mOhms | |
| RoHS Status | ROHS3 Compliant | |
| Moisture Sensitivity Level (MSL) | Not Applicable | |
| Mounting Style | Screw Mount | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| FET Feature | - | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| ECCN | EAR99 | |
| Typical Turn-Off Delay Time | 75 ns | |
| Transistor Polarity | N-Channel | |
| Mounting Type | Chassis Mount | |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 13.5A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 8mA | |
| Minimum Operating Temperature | - 55 C | |
| Vds - Drain-Source Breakdown Voltage | 800 V | |
| Series | HiPerFET™ | |
| Rise Time | 80 ns | |
| Length | 38.23 mm | |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 15V | |
| HTSUS | 8541.29.0095 | |
| Package | Tube | |
| Pd - Power Dissipation | 520 W | |
| USHTS | 8541290095 | |
| Base Product Number | IXFN27 |
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