IXFN50N80Q2
Single FETs, MOSFETs Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
IXFN50N80Q2
278-IXFN50N80Q2
MOSFET N-CH 800V 50A SOT-227B
IXFN50N80Q2 Description
N-Channel 800 V 50A (Tc) 1135W (Tc) Chassis Mount SOT-227B
Technical specifications
| Configuration | Single Dual Source | |
| Typical Turn-Off Delay Time (ns) | 60 | |
| Input Capacitance (Ciss) (Max) @ Vds | 13500 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V | |
| Typical Rise Time (ns) | 25 | |
| PPAP | No | |
| Channel Mode | Enhancement | |
| Typical Turn-On Delay Time (ns) | 26 | |
| Product Status | Not For New Designs | |
| Automotive | No | |
| Drain to Source Voltage (Vdss) | 800 V | |
| Supplier Package | SOT-227B | |
| Package / Case | SOT-227-4, miniBLOC | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Channel Type | N | |
| EU RoHS | Compliant with Exemption | |
| Maximum Continuous Drain Current (A) | 50 | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Maximum Drain Source Voltage (V) | 800 | |
| Maximum Drain Source Resistance (mOhm) | 160@10V | |
| ECCN | EAR99 | |
| Mounting Type | Chassis Mount | |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 500mA, 10V | |
| Vgs(th) (Max) @ Id | 5.5V @ 8mA | |
| Pin Count | 4 | |
| Mounting | Screw | |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| HTSUS | 8541.29.0095 | |
| Package | Tube | |
| Typical Gate Charge @ Vgs (nC) | 260@10V | |
| Typical Input Capacitance @ Vds (pF) | 13500@25V | |
| Category | Power MOSFET | |
| PCB changed | 4 | |
| HTS | 8541.29.00.95 | |
| FET Type | N-Channel | |
| Number of Elements per Chip | 1 | |
| ECCN (US) | EAR99 | |
| Maximum Power Dissipation (mW) | 1135000 | |
| Supplier Device Package | SOT-227B | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 150 | |
| Power Dissipation (Max) | 1135W (Tc) | |
| Typical Fall Time (ns) | 13 | |
| Process Technology | HiperFET | |
| Mfr | IXYS | |
| Vgs (Max) | ±30V | |
| RoHS Status | ROHS3 Compliant | |
| FET Feature | - | |
| Maximum Gate Source Voltage (V) | ±30 | |
| Package Length | 38.23(Max) | |
| Typical Gate Charge @ 10V (nC) | 260 | |
| Series | HiPerFET™, Q2 Class | |
| Part Status | NRND | |
| Package Width | 25.42(Max) | |
| Base Product Number | IXFN50 |
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