IXFN64N60P (In Stock:1023)

Single FETs, MOSFETs
Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
IXFN64N60P
278-IXFN64N60P
MOSFET N-CH 600V 50A SOT227B
1+:$34.57000
10+:$30.71600
100+:$26.86530
InStock Quantity: 1023

IXFN64N60P Description

N-Channel 600 V 50A (Tc) 700W (Tc) Chassis Mount SOT-227B

Technical specifications

Unit Weight1.058219 oz
ConfigurationSingle
Id - Continuous Drain Current50 A
Input Capacitance (Ciss) (Max) @ Vds12000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs200 nC @ 10 V
Fall Time24 ns
Product StatusActive
RoHSRoHS Compliant
Drain to Source Voltage (Vdss)600 V
TradenameHiPerFET
Package / CaseSOT-227-4, miniBLOC
Number of Channels1 Channel
Typical Turn-On Delay Time28 ns
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
Rds On - Drain-Source Resistance96 mOhms
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 150°C (TJ)
ECCNEAR99
Mounting TypeChassis Mount
Rds On (Max) @ Id, Vgs96mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Rise Time23 ns
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
HTSUS8541.29.0095
PackageTube
USHTS8541290095
FET TypeN-Channel
Supplier Device PackageSOT-227B
Power Dissipation (Max)700W (Tc)
MfrIXYS
Vgs (Max)±30V
Height9.6 mm
Maximum Operating Temperature+ 150 C
Width25.07 mm
RoHS StatusROHS3 Compliant
Mounting StyleScrew Mount
FET Feature-
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-Off Delay Time79 ns
Transistor PolarityN-Channel
Minimum Operating Temperature- 55 C
Vds - Drain-Source Breakdown Voltage600 V
SeriesHiPerFET™, Polar
TypeHiperFET
Length38.2 mm
Pd - Power Dissipation700 W
Base Product NumberIXFN64

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