IXFP110N15T2 (In Stock:289)

Single FETs, MOSFETs
Manufacturer:
Mfr. Part #:
onzuu Part #:
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Description:
IXFP110N15T2
278-IXFP110N15T2
MOSFET N-CH 150V 110A TO220AB
1+:$2.44185
10+:$1.86399
50+:$1.45458
100+:$1.32149
500+:$1.26013
1000+:$1.23276
InStock Quantity: 289

IXFP110N15T2 Description

N-Channel 150 V 110A (Tc) 480W (Tc) Through Hole TO-220-3

Technical specifications

Unit Weight0.068784 oz
ConfigurationSingle
Id - Continuous Drain Current110 A
Input Capacitance (Ciss) (Max) @ Vds8600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs150 nC @ 10 V
Channel ModeEnhancement
Fall Time18 ns
Product StatusActive
RoHSRoHS Compliant
Drain to Source Voltage (Vdss)150 V
TradenameHiPerFET
Transistor Type1 N-Channel
Package / CaseTO-220-3
Number of Channels1 Channel
Typical Turn-On Delay Time33 ns
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
Rds On - Drain-Source Resistance11 mOhms
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 175°C (TJ)
ECCNEAR99
Mounting TypeThrough Hole
Rds On (Max) @ Id, Vgs13mOhm @ 55A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Rise Time16 ns
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs th - Gate-Source Threshold Voltage4.5 V
HTSUS8541.29.0095
PackageTube
USHTS8541290095
FET TypeN-Channel
Qg - Gate Charge150 nC
Supplier Device PackageTO-220-3
Power Dissipation (Max)480W (Tc)
MfrIXYS
Vgs (Max)±20V
Maximum Operating Temperature+ 175 C
RoHS StatusROHS3 Compliant
Mounting StyleThrough Hole
FET Feature-
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-Off Delay Time33 ns
Transistor PolarityN-Channel
Minimum Operating Temperature- 55 C
Vds - Drain-Source Breakdown Voltage150 V
SeriesHiPerFET™, TrenchT2™
Forward Transconductance - Min75 S
Pd - Power Dissipation480 W
Base Product NumberIXFP110

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