IXTQ22N50P (In Stock:422)

Single FETs, MOSFETs
Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
IXTQ22N50P
278-IXTQ22N50P
MOSFET N-CH 500V 22A TO3P
1+:$4.11450
10+:$3.65733
100+:$3.13159
1000+:$2.94872
InStock Quantity: 422

IXTQ22N50P Description

N-Channel 500 V 22A (Tc) 350W (Tc) Through Hole TO-3P

Technical specifications

Unit Weight0.194007 oz
ConfigurationSingle
Id - Continuous Drain Current22 A
Input Capacitance (Ciss) (Max) @ Vds2630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Channel ModeEnhancement
Fall Time21 ns
Product StatusActive
RoHSRoHS Compliant
Drain to Source Voltage (Vdss)500 V
Transistor Type1 N-Channel
Package / CaseTO-3P-3, SC-65-3
Number of Channels1 Channel
Typical Turn-On Delay Time22 ns
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
Rds On - Drain-Source Resistance270 mOhms
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 150°C (TJ)
ECCNEAR99
Mounting TypeThrough Hole
Rds On (Max) @ Id, Vgs270mOhm @ 11A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Rise Time25 ns
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs th - Gate-Source Threshold Voltage3 V
HTSUS8541.29.0095
PackageTube
USHTS8541290095
FET TypeN-Channel
Qg - Gate Charge50 nC
Supplier Device PackageTO-3P
Power Dissipation (Max)350W (Tc)
MfrIXYS
Vgs (Max)±30V
Height20.3 mm
Maximum Operating Temperature+ 150 C
Width4.9 mm
RoHS StatusROHS3 Compliant
Mounting StyleThrough Hole
FET Feature-
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-Off Delay Time72 ns
Transistor PolarityN-Channel
Minimum Operating Temperature- 55 C
Vds - Drain-Source Breakdown Voltage500 V
SeriesPolar
Length15.8 mm
Forward Transconductance - Min12 S
Pd - Power Dissipation350 W
Base Product NumberIXTQ22

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