| Unit Weight | 0.194007 oz | |
| Configuration | Single | |
| Id - Continuous Drain Current | 22 A | |
| Input Capacitance (Ciss) (Max) @ Vds | 2630 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V | |
| Channel Mode | Enhancement | |
| Fall Time | 21 ns | |
| Product Status | Active | |
| RoHS | RoHS Compliant | |
| Drain to Source Voltage (Vdss) | 500 V | |
| Transistor Type | 1 N-Channel | |
| Package / Case | TO-3P-3, SC-65-3 | |
| Number of Channels | 1 Channel | |
| Typical Turn-On Delay Time | 22 ns | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Rds On - Drain-Source Resistance | 270 mOhms | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| ECCN | EAR99 | |
| Mounting Type | Through Hole | |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 11A, 10V | |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA | |
| Rise Time | 25 ns | |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Vgs th - Gate-Source Threshold Voltage | 3 V | |
| HTSUS | 8541.29.0095 | |
| Package | Tube | |
| USHTS | 8541290095 | |
| FET Type | N-Channel | |
| Qg - Gate Charge | 50 nC | |
| Supplier Device Package | TO-3P | |
| Power Dissipation (Max) | 350W (Tc) | |
| Mfr | IXYS | |
| Vgs (Max) | ±30V | |
| Height | 20.3 mm | |
| Maximum Operating Temperature | + 150 C | |
| Width | 4.9 mm | |
| RoHS Status | ROHS3 Compliant | |
| Mounting Style | Through Hole | |
| FET Feature | - | |
| Vgs - Gate-Source Voltage | - 30 V, + 30 V | |
| Typical Turn-Off Delay Time | 72 ns | |
| Transistor Polarity | N-Channel | |
| Minimum Operating Temperature | - 55 C | |
| Vds - Drain-Source Breakdown Voltage | 500 V | |
| Series | Polar | |
| Length | 15.8 mm | |
| Forward Transconductance - Min | 12 S | |
| Pd - Power Dissipation | 350 W | |
| Base Product Number | IXTQ22 |
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