SI2333A-TP

Single FETs, MOSFETs
Manufacturer:
Mfr. Part #:
onzuu Part #:
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Description:

Technical specifications

Unit Weight0.000282 oz
ConfigurationSingle
Typical Turn-Off Delay Time (ns)52
Maximum Gate Source Leakage Current (nA)100
Input Capacitance (Ciss) (Max) @ Vds740 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs21 nC @ 4.5 V
Typical Rise Time (ns)5.4
PPAPNo
Channel ModeEnhancement
Typical Turn-On Delay Time (ns)7.1
Product StatusActive
RoHSRoHS Compliant
AutomotiveNo
Drain to Source Voltage (Vdss)15 V
Supplier PackageSOT-23
Maximum IDSS (uA)1
Package / CaseTO-236-3, SC-59, SOT-23-3
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
Channel TypeP
EU RoHSCompliant
Maximum Continuous Drain Current (A)5.6
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Drain Source Voltage (V)15
Maximum Drain Source Resistance (mOhm)[email protected]
ECCNEAR99
Mounting TypeSurface Mount
Standard Package NameSOT
Rds On (Max) @ Id, Vgs40mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Pin Count3
MountingSurface Mount
Current - Continuous Drain (Id) @ 25°C5.6A
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
HTSUS8541.29.0095
PackageBulk
USHTS8541290095
Typical Gate Charge @ Vgs (nC)[email protected]
Typical Input Capacitance @ Vds (pF)810@6V
CategoryPower MOSFET
PCB changed3
FET TypeP-Channel
Number of Elements per Chip1
ECCN (US)EAR99
Maximum Power Dissipation (mW)1100
Supplier Device PackageSOT-23
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)150
Power Dissipation (Max)1.1W
Typical Fall Time (ns)26
Process TechnologyTrenchFET
Package Height1.1(Max)
MfrMicro Commercial Co
Vgs (Max)±8V
FET Feature-
Maximum Gate Source Voltage (V)±8
Package Length3.04(Max)
SeriesSI2333A
Part StatusActive
Maximum Gate Threshold Voltage (V)1
Package Width1.4(Max)
Base Product NumberSI2333

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