2N2219AE4

Single Bipolar Transistors
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2N2219AE4 Description

Bipolar (BJT) Transistor NPN 50 V 800 mA 800 mW Through Hole TO-39 (TO-205AD)

Technical specifications

Operating Temperature-55°C ~ 200°C (TJ)
Frequency - Transition-
Current - Collector (Ic) (Max)800 mA
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
ECCNEAR99
Mounting TypeThrough Hole
Product StatusActive
Voltage - Collector Emitter Breakdown (Max)50 V
Supplier Device PackageTO-39 (TO-205AD)
Series-
Transistor TypeNPN
Package / CaseTO-205AD, TO-39-3 Metal Can
Power - Max800 mW
REACH StatusREACH Unaffected
MfrMicrochip Technology
Current - Collector Cutoff (Max)10nA
HTSUS8541.21.0095
PackageBulk
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Base Product Number2N2219

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