2N3057A

Single Bipolar Transistors
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2N3057A Description

Bipolar (BJT) Transistor NPN 80 V 1 A 500 mW Through Hole TO-46-3

Technical specifications

Operating Temperature-65°C ~ 200°C (TJ)
Frequency - Transition-
Current - Collector (Ic) (Max)1 A
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
ECCNEAR99
Mounting TypeThrough Hole
Product StatusActive
Voltage - Collector Emitter Breakdown (Max)80 V
Supplier Device PackageTO-46-3
Series-
Transistor TypeNPN
Package / CaseTO-206AB, TO-46-3 Metal Can
Power - Max500 mW
REACH StatusREACH Unaffected
MfrMicrochip Technology
Current - Collector Cutoff (Max)10nA
HTSUS8541.21.0095
PackageBulk
RoHS StatusRoHS non-compliant
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 500mA, 10V
Base Product Number2N3057
Moisture Sensitivity Level (MSL)1 (Unlimited)

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