2N3439U4

Single Bipolar Transistors
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2N3439U4 Description

Bipolar (BJT) Transistor NPN 350 V 1 A 800 mW Surface Mount U4

Technical specifications

Operating Temperature-65°C ~ 200°C (TJ)
Frequency - Transition-
Current - Collector (Ic) (Max)1 A
Vce Saturation (Max) @ Ib, Ic500mV @ 4mA, 50mA
ECCNEAR99
Mounting TypeSurface Mount
Product StatusActive
Voltage - Collector Emitter Breakdown (Max)350 V
Supplier Device PackageU4
Series-
Transistor TypeNPN
Package / Case3-SMD, No Lead
Power - Max800 mW
REACH StatusREACH Unaffected
MfrMicrochip Technology
Current - Collector Cutoff (Max)2µA
HTSUS8541.21.0095
PackageTray
RoHS StatusRoHS non-compliant
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 20mA, 10V
Base Product Number2N3439

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