2N3584

Single Bipolar Transistors
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2N3584 Description

Bipolar (BJT) Transistor NPN 250 V 2 A 2.5 W Through Hole TO-66 (TO-213AA)

Technical specifications

ConfigurationSingle
PPAPNo
Maximum Base Emitter Saturation Voltage (V)[email protected]@1A
Product StatusActive
Voltage - Collector Emitter Breakdown (Max)250 V
RoHSN
AutomotiveNo
Supplier PackageTO-66
Transistor TypeNPN
Package / CaseTO-213AA, TO-66-2
TechnologySi
REACH StatusREACH Unaffected
Maximum Collector-Emitter Saturation Voltage (V)[email protected]@1A
EU RoHSNot Compliant
Operating Temperature-65°C ~ 200°C (TJ)
Maximum Collector Base Voltage (V)375
Frequency - Transition-
Current - Collector (Ic) (Max)2 A
ECCNEAR99
Maximum Emitter Base Voltage (V)6
Mounting TypeThrough Hole
Standard Package NameTO
Pin Count3
MountingThrough Hole
HTSUS8541.29.0095
PackageBulk
USHTS8541290095
CategoryBipolar Power
PCB changed2
HTS8541.29.00.95
Number of Elements per Chip1
Maximum Collector-Emitter Voltage (V)250
ECCN (US)EAR99
Maximum Power Dissipation (mW)2500
Supplier Device PackageTO-66 (TO-213AA)
Minimum Operating Temperature (°C)-65
Maximum Operating Temperature (°C)200
Package Height8.64(Max)
MfrMicrochip Technology
RoHS StatusRoHS non-compliant
Mounting StyleThrough Hole
Vce Saturation (Max) @ Ib, Ic750mV @ 125mA, 1A
MaterialSi
Package Length24.43(Max) + 7.36
Series-
TypeNPN
Minimum DC Current Gain40@100mA@10V|25@1A@10V
Operating Junction Temperature (°C)-65 to 200
TabTab
Maximum DC Collector Current (A)2
Power - Max2.5 W
Part StatusActive
Current - Collector Cutoff (Max)5mA
Package Width17.78
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 100mA, 10V
Base Product Number2N3584

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