2N3879 (In Stock:259)
Single Bipolar Transistors Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
2N3879 Description
Bipolar (BJT) Transistor NPN 75 V 7 A 35 W Through Hole TO-66 (TO-213AA)
Technical specifications
| Unit Weight | 0.634459 oz | |
| Configuration | Single | |
| PPAP | No | |
| Maximum Base Emitter Saturation Voltage (V) | [email protected]@4A | |
| Product Status | Active | |
| Voltage - Collector Emitter Breakdown (Max) | 75 V | |
| RoHS | N | |
| Automotive | No | |
| Supplier Package | TO-66 | |
| Transistor Type | NPN | |
| Package / Case | TO-213AA, TO-66-2 | |
| Technology | Si | |
| REACH Status | REACH Unaffected | |
| Maximum Collector-Emitter Saturation Voltage (V) | [email protected]@4A | |
| Collector- Base Voltage VCBO | 120 V | |
| EU RoHS | Not Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Operating Temperature | -65°C ~ 200°C (TJ) | |
| Maximum Collector Base Voltage (V) | 120 | |
| Frequency - Transition | - | |
| Current - Collector (Ic) (Max) | 7 A | |
| ECCN | EAR99 | |
| Maximum Emitter Base Voltage (V) | 7 | |
| Mounting Type | Through Hole | |
| Standard Package Name | TO | |
| Pin Count | 3 | |
| Mounting | Through Hole | |
| Collector- Emitter Voltage VCEO Max | 75 V | |
| HTSUS | 8541.29.0095 | |
| Package | Bulk | |
| USHTS | 8541290095 | |
| Category | Bipolar Power | |
| PCB changed | 2 | |
| HTS | 8541.21.00.95 | |
| Number of Elements per Chip | 1 | |
| Maximum Collector-Emitter Voltage (V) | 75 | |
| ECCN (US) | EAR99 | |
| Maximum Power Dissipation (mW) | 35000 | |
| Supplier Device Package | TO-66 (TO-213AA) | |
| Minimum Operating Temperature (°C) | -65 | |
| Maximum Operating Temperature (°C) | 200 | |
| Maximum DC Collector Current | 7 A | |
| Package Height | 8.64(Max) | |
| Collector-Emitter Saturation Voltage | 1.2 V | |
| Mfr | Microchip Technology | |
| Maximum Operating Temperature | + 200 C | |
| RoHS Status | RoHS non-compliant | |
| Mounting Style | Through Hole | |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 400mA, 4A | |
| Material | Si | |
| Transistor Polarity | NPN | |
| Package Length | 24.43(Max) + 7.36 | |
| Minimum Operating Temperature | - 65 C | |
| Emitter- Base Voltage VEBO | 7 V | |
| Series | - | |
| Type | NPN | |
| Minimum DC Current Gain | 12@4A@2V|20@4A@5V|[email protected]@5V | |
| Tab | Tab | |
| Maximum DC Collector Current (A) | 7 | |
| Gain Bandwidth Product fT | - | |
| Power - Max | 35 W | |
| Part Status | Active | |
| Current - Collector Cutoff (Max) | 4mA | |
| Package Width | 17.78 | |
| Pd - Power Dissipation | 35 W | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 500mA, 5V | |
| Base Product Number | 2N3879 |
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