Configuration | Single | |
Gate-Source Cutoff Voltage | 3 V | |
Id - Continuous Drain Current | 12 mA | |
FET Type | N-Channel | |
Voltage - Cutoff (VGS off) @ Id | 500 mV @ 1 nA | |
Input Capacitance (Ciss) (Max) @ Vds | 14pF @ 20V | |
Resistance - RDS(On) | 100 Ohms | |
Drain-Source Current at Vgs=0 | 30 mA | |
Product Status | Active | |
RoHS | N | |
Supplier Device Package | TO-18 | |
Package / Case | TO-18-3 | |
Technology | Si | |
Maximum Drain Gate Voltage | 40 V | |
REACH Status | REACH Unaffected | |
Mfr | Microchip Technology | |
Maximum Operating Temperature | + 175 C | |
Rds On - Drain-Source Resistance | 100 Ohms | |
RoHS Status | RoHS non-compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Mounting Style | Through Hole | |
Operating Temperature | -55°C ~ 125°C (TJ) | |
Vgs - Gate-Source Breakdown Voltage | 40 V | |
ECCN | EAR99 | |
Transistor Polarity | N-Channel | |
Current - Drain (Idss) @ Vds (Vgs=0) | 5 mA @ 20 V | |
Mounting Type | Through Hole | |
Minimum Operating Temperature | - 65 C | |
Vds - Drain-Source Breakdown Voltage | 400 mV | |
Series | - | |
Type | JFET | |
Power - Max | 1.8 W | |
HTSUS | 8541.29.0095 | |
Package | Bulk | |
Pd - Power Dissipation | 1.8 W | |
USHTS | 8541290095 | |
Base Product Number | 2N4393 | |
Voltage - Breakdown (V(BR)GSS) | 40 V |
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