2N4393 (In Stock:44)

JFETs
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2N4393 Description

JFET N-Channel 40 V 1.8 W Through Hole TO-18

Technical specifications

ConfigurationSingle
Gate-Source Cutoff Voltage3 V
Id - Continuous Drain Current12 mA
FET TypeN-Channel
Voltage - Cutoff (VGS off) @ Id500 mV @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds14pF @ 20V
Resistance - RDS(On)100 Ohms
Drain-Source Current at Vgs=030 mA
Product StatusActive
RoHSN
Supplier Device PackageTO-18
Package / CaseTO-18-3
TechnologySi
Maximum Drain Gate Voltage40 V
REACH StatusREACH Unaffected
MfrMicrochip Technology
Maximum Operating Temperature+ 175 C
Rds On - Drain-Source Resistance100 Ohms
RoHS StatusRoHS non-compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 125°C (TJ)
Vgs - Gate-Source Breakdown Voltage40 V
ECCNEAR99
Transistor PolarityN-Channel
Current - Drain (Idss) @ Vds (Vgs=0)5 mA @ 20 V
Mounting TypeThrough Hole
Minimum Operating Temperature- 65 C
Vds - Drain-Source Breakdown Voltage400 mV
Series-
TypeJFET
Power - Max1.8 W
HTSUS8541.29.0095
PackageBulk
Pd - Power Dissipation1.8 W
USHTS8541290095
Base Product Number2N4393
Voltage - Breakdown (V(BR)GSS)40 V

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