2N5630

Single Bipolar Transistors
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2N5630 Description

Bipolar (BJT) Transistor PNP 120 V 16 A 200 W Through Hole TO-204AD (TO-3)

Technical specifications

CategoryBipolar Power
ConfigurationSingle
PCB changed2
Number of Elements per Chip1
Maximum Collector-Emitter Voltage (V)120
ECCN (US)EAR99
PPAPNo
Maximum Power Dissipation (mW)200000
Product StatusActive
Voltage - Collector Emitter Breakdown (Max)120 V
AutomotiveNo
Supplier Device PackageTO-204AD (TO-3)
Supplier PackageTO-3
Transistor TypePNP
Package / CaseTO-204AA, TO-3
TechnologySi
REACH StatusREACH Unaffected
Package Height7.92
MfrMicrochip Technology
Maximum Collector-Emitter Saturation Voltage (V)1@1mA@8mA
EU RoHSNot Compliant
Operating Temperature-65°C ~ 200°C (TJ)
Frequency - Transition-
Current - Collector (Ic) (Max)16 A
Vce Saturation (Max) @ Ib, Ic-
ECCNEAR99
Transistor PolarityNPN
Package Length39.29
Mounting TypeThrough Hole
Standard Package NameTO
Pin Count3
MountingThrough Hole
Series-
TypeNPN
TabTab
Maximum DC Collector Current (A)16
Lead ShapeThrough Hole
Power - Max200 W
Part StatusActive
Current - Collector Cutoff (Max)-
HTSUS8541.29.0095
PackageBulk
Package Width26.42
USHTS8541290095
DC Current Gain (hFE) (Min) @ Ic, Vce-

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